LD(Laser Diode)

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  • LASER DIODE DIE BONDER SYSTEM KD200A/B

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    ITEM Specification
    Overview • Pre heating by Rotator - Submount & LD Mount on STEM(TO Header)
    Application • Laser diode(LD) - TO Header : TO56, TO60, TO38
    Bonding Method • AuSn Eutectic bonder
    Cycle time • Laser Diode : 7.0sec/cycle - Optimal condition criteria ( May vary depending on condition/environment)
    Bonding Accuracy • [XY] ±15㎛, [θ]±1.0° - Depend on work/chip shape and precision - May change depending on STEM, SUB, LD, COLLET status
    Dimension  (W*D*H) • 1,600*1,020*1,330(mm) (Excepted Tower Lamp) • Weight about 1,200kg
    Utility • AC 220V, 1 Phase(50Hz/60Hz, 2.0kw) • Air: 4~6㎏f /㎠, • N2 GAS : 5kgf/㎠ more than(5L/Min) • VACUUM : -70kPa less then(120L/Min)