LD(Laser Diode)

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  • LASER DIODE DIE BONDER SYSTEM KD250A

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    ITEM Specification
    Overview • Dual work station(1 deg, 15 deg), Epoxy function(Option) - Submount & LD Mount on STEM(TO Header)
    Application • Laser diode(LD, PD, COS(Chip On Submount) - TO Header : TO56, TO60, TO38, Cooled/Uncooled package
    Bonding Method • Eutectic bonder(AuSn Plated)
    Cycle time • LD(Laser Diode) About 16~25sec/cycle • Cooled package : Depend on User process - Optimal condition criteria (May vary depending on condition/environment)
    Bonding Accuracy • [XY] ±15㎛, [θ]±1.5° - Depend on work/chip shape and precision - May change depending on STEM, SUB, LD, COLLET status
    Dimension  (W*D*H) • 2,200*1,300*1,400(mm), (Excepted Tower Lamp) • Weight about 1,400kg
    Utility • AC 220V, 1 Phase(50Hz/60Hz, 2.0kw) • Air: 4~6㎏f /㎠, • N2 GAS : 5kgf/㎠ more than(5L/Min) • VACUUM : -70kPa less then(120L/Min)